DRAD diamond-encapsulated radiation-hard chip package, generic family hero shot
◈   CVD Diamond Substrate · Graphene FET · RISC-V · Radiation-Hard · Asteroid-Manufactured   ◈

DRAD

Diamond Radiation-Hard Advanced Processor Family
DRAD-750
DRAD-1
DRAD-2
DRAD-HighFreq
DRAD-Power
DRAD-Extreme
DRAD-3
DRAD-Adaptive

CVD diamond substrate. Graphene FET array. RISC-V ISA. Manufactured at L4 from asteroid-derived carbon at zero raw material cost. Radiation-hard where silicon fails in hours. Operates in environments where no other chip survives. Nuclear reactors. Deep space. Chernobyl sub-basement. Fusion drive control. The processor family that runs the solar system.

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The Substrate

Why CVD Diamond
and Nothing Else

Silicon fails under radiation because ionizing particles create electron-hole pairs that degrade CMOS gate oxides and cause latchup. The physics of silicon failure is unavoidable — it is a property of the material, not of the design. Diamond has a 5.5 eV bandgap. Radiation-induced ionization cannot bridge this gap under any dose rate encountered in terrestrial or space environments. The substrate is physically immune to the primary mechanism that destroys silicon.

5.5 eV
BANDGAP — CVD DIAMOND
Widest bandgap of any practical semiconductor. Silicon: 1.1 eV. SiC: 3.3 eV. Diamond: 5.5 eV. Radiation cannot bridge this gap at any achievable dose rate.
2,000
W/m·K THERMAL CONDUCTIVITY
5× better than copper. 13× better than silicon. Diamond dissipates heat faster than any other material. The chip runs cool where silicon melts.
>1 Mrad
TID RATING — DRAD-1 BASELINE
Total Ionizing Dose. Silicon CMOS fails at ~500 rad. MIL-SPEC silicon at ~300 krad. DRAD-1 operates above 1 Mrad with no degradation.
Zero
RAW MATERIAL COST
CVD diamond grown from carbon feedstock at L4 Factory 3. Feedstock sourced from asteroid 2020 XL5 — 40–45 million tonnes of carbon. Zero Earth launch cost for substrate production.
RISC-V
INSTRUCTION SET ARCHITECTURE
Open ISA. Custom opcode extensions for timing-domain deterministic execution. All DRAD family members share the same ISA — software written for any DRAD variant runs on all others without modification.
L4
MANUFACTURING LOCATION
Factory 3 Line 3C (substrate), Line 3G (DRAD-750), Line 3C/3A (DRAD-1). Factory 4 (DRAD-2 and beyond). All Lines DRAD-1 controlled. The chip factory runs on the chip it produces.

Silicon at Chernobyl sub-basement (300 R/hr ambient): Standard CMOS fails in under 2 hours. Mil-spec silicon fails in days. SiC is marginal. No silicon variant has completed a sustained remediation operation in the Reactor 4 sub-basement. Every robotic system deployed has failed — not from mechanical damage — from radiation killing the electronics. DRAD-1 is rated operational indefinitely in this environment. DRAD-Extreme is designed specifically for it. The sub-basement is now a survivable environment.

The Full Family

Eight Members.
One Architecture.

Every DRAD family member shares the CVD diamond substrate, graphene FET array, and RISC-V ISA. They differ in clock speed, radiation hardness class, and quantum metric architecture level. All are manufactured at L4. All are delivered FOB Earth orbit from Month 21. Chip prices are determined by market value for radiation hardness — not benchmarked against consumer silicon.

DRAD family package size range, from smallest SMD package to TO-220-class power package
VOLUME COMMERCIAL · FACTORY 3 LINE 3G
DRAD-750
The workhorse. The product that fills container ships.
DRAD-750 packaged chip, CVD diamond encapsulation, gold pin array
CLOCK
750 MHz
TID RATING
>1 Mrad
SUBSTRATE
CVD Diamond
ISA
RISC-V
AVAILABLE
Month 14–15
FOB EARTH
Month 21
750 MHz is a conservative operating point maximising reliability margin within the radiation environment. Not a material limit — a deliberate design choice for deterministic embedded control applications where predictability matters more than raw speed. Fully DRAD-1 software-compatible. Mixed DRAD-750/DRAD-1 fleets on the same bus: supported.
APPLICATIONS: Nuclear plant instrumentation · GEO satellite attitude control · Industrial radiation environments · Medical accelerator control · Factory automation nodes · Drone fleet embedded control
● PRODUCTION MONTH 14
SYSTEM INTEGRATOR · FACTORY 3 LINE 3C/3A
DRAD-1
Runs the factory. Runs the drones. Runs the FPP drive.
CLOCK
GHz range
TID RATING
>1 Mrad
SUBSTRATE
CVD Diamond
ISA
RISC-V
AVAILABLE
Month 14.5
FOB EARTH
Month 21
The primary Speculāris system chip. DRAD-1 nodes operate every drone class, every factory production line, every FPP drive control system, every communications laser array, and every sensor in the network. Sub-picosecond timing precision — the same timing capability that synchronises the 384-port fusion ignition laser array.
APPLICATIONS: FPP-1 / FPP-2 drive control · C1–C8 drone fleet · Factory 3 production line control · Laser comm array timing · RFID asset tracking · Pro-Pel depot operations · Chernobyl remediation drone fleet
● PRODUCTION MONTH 14.5
QUANTUM METRIC · FACTORY 4 · MONTH 18–24
DRAD-2
Terahertz. Quantum metric-engineered. 10× harder.
CLOCK
1.2+ THz
TID RATING
>10 Mrad
ARCH
QG-FET
MOBILITY
+300% vs D1
AVAILABLE
Month 18–24
INTERFACE
SrTiO₃/LaAlO₃
Quantum metric-engineered conduction channels. Perovskite SrTiO₃/LaAlO₃ heterostructure interface grown on CVD diamond. Electron trajectories geometrically protected from radiation-induced scattering. Carrier transport shifts from scattering-limited to geometrically protected ballistic transport — a different physical regime, not an incremental improvement.
APPLICATIONS: L4–L5 interferometer signal processing · FPP-2 sub-picosecond synchronisation · Deep space high-data-rate comms · Quantum metric research instrument control · Factory 4 production line control
◌ FACTORY 4 MONTH 18
TERAHERTZ SPECIALIST · DRAD-2 VARIANT
DRAD-HF
Multi-THz sensors and deep-space communications.
CLOCK
Multi-THz
TID RATING
>10 Mrad
BASE
DRAD-2
DESIGN
Month 28
DRAD-2 design parameters locked for terahertz frequency transceiver operation. Optimised for high-altitude sensor matrices, L4–L5 laser interferometer signal processing, and deep-space communication transceivers operating in multi-THz bands. Stable gate modulation without thermal dissipation bottlenecks.
APPLICATIONS: L4–L5 interferometer signal chain · Deep space laser comm receiver · THz sensor arrays · Scientific instrument front-end electronics · L5 station observatory control
◌ FACTORY 4 MONTH 28
HIGH-CURRENT · DRAD-2 VARIANT
DRAD-PWR
Drives the FPP coils. Controls the mass driver.
B-FIELD
>15 Tesla
TID RATING
>10 Mrad
BASE
DRAD-2
DESIGN
Month 28
Thick-film boron-doped diamond backing layers for high-current switching and control in magnetic field environments exceeding 15 Tesla. Manages the CNT stator coil current in FPP-1 and FPP-2 drive assemblies. Mass driver electromagnetic coil control. High-current electrode switching without conventional semiconductor failure modes.
APPLICATIONS: FPP-1 / FPP-2 confinement coil drivers · Swiss Alps mass driver coil control · MHD induction power conditioning · Tesla turbine CNT coil ring drive · High-current industrial switching
◌ FACTORY 4 MONTH 28
ULTRA-RAD-HARD · FACTORY 4 · YEAR 3–5
DRAD-X
Chernobyl. Fukushima. Deep space. Indefinite.
TID RATING
>100 Mrad
ENVIRONMENT
Corium-proximity
LIFETIME
Operational INDEF
BASE
DRAD-3 arch
Designed for the most severe radiation environments that exist or are planned. Chernobyl Reactor 4 sub-basement — 300 R/hr ambient. Fukushima primary containment. Long-duration deep space missions beyond the belt. Jupiter atmospheric probe electronics. Any environment where DRAD-1 is the baseline and even that is not enough. The sub-basement is now a survivable environment.
APPLICATIONS: Chernobyl remediation C1-R drone fleet · Fukushima containment monitoring · Jupiter mission avionics · Deep space probe electronics beyond 10 AU · FPP-2 primary confinement field coil proximity sensors
◌ FACTORY 4 YEAR 3
ADVANCED ARCHITECTURE · FACTORY 4 · YEAR 3–5
DRAD-3
Multi-THz. 100× harder. Topological superconducting gates.
CLOCK
Multi-THz
TID RATING
>100 Mrad
MOBILITY
+800% vs D1
GATES
Topological SC
Third generation. Topological and quantum-geometric superconductivity at diamond interfaces. 3D stacked quantum metric heterostructures. Multi-THz operation at 100 Mrad TID rating. The performance goal that defines the long-term roadmap for the DRAD family. Carrier mobility +800% versus DRAD-1 baseline under strong magnetic field.
APPLICATIONS: Future FPP-3 drive systems · Advanced L4–L5 signal processing · Quantum computing applications · Topological qubit integration · Year 5+ commercial licensing
◌ FACTORY 4 YEAR 3–5
SELF-OPTIMISING · PHASE 3 · YEAR 3–5
DRAD-A
Tunes itself. Real-time. No human intervention.
ARCHITECTURE
Adaptive QM
SELF-TUNE
Real-time
FEEDBACK
Embedded DRAD-1
TID
>100 Mrad
An embedded DRAD-1 supervisor continuously tunes quantum metric parameters in real time based on measured radiation environment and operating conditions. The chip reconfigures its own geometric electron trajectory protection in response to changing radiation fields and temperature. No manual recalibration. No human intervention. The chip is its own radiation hardening algorithm.
APPLICATIONS: Long-duration deep space missions with variable radiation environment · FPP reactor environments with changing flux · Missions requiring set-and-forget electronics with decade-scale lifetime guarantees
◌ FACTORY 4 YEAR 3–5
Family Comparison

Side by Side

Chip Clock TID Rating Carrier mobility Architecture Production Primary use
DRAD-750
 750 MHz >1 Mrad Baseline CVD Diamond / Graphene FET Month 14 Volume commercial
DRAD-1
 GHz >1 Mrad Baseline CVD Diamond / Graphene FET Month 14.5 System integrator
DRAD-2
 1.2+ THz >10 Mrad +300% CVD Diamond / QG-FET / SrTiO₃ Month 18–24 Terahertz specialist
DRAD-HF
 Multi-THz >10 Mrad +300% DRAD-2 variant — THz optimised Month 28 Sensors / deep-space comms
DRAD-PWR
 THz >10 Mrad +300% DRAD-2 variant — thick-film boron diamond Month 28 FPP coil drivers / mass driver
DRAD-X
 THz >100 Mrad +400% DRAD-3 arch — Extreme environment Year 3 Chernobyl / deep space
DRAD-3
 Multi-THz >100 Mrad +800% Topological SC gates / 3D stacked Year 3–5 Advanced systems
DRAD-A
 Multi-THz >100 Mrad Self-tuning Adaptive QM — embedded DRAD-1 supervisor Year 3–5 Long-duration autonomous
The Physics — DRAD-2 and Beyond

The Quantum
Metric

The quantum metric tensor (gab) describes the geometric distance between quantum states in Hilbert space at a material interface. At oxide heterostructure interfaces — SrTiO₃/LaAlO₃ on CVD diamond — the quantum metric can be engineered to protect electron trajectories from scattering. Ionizing radiation that would destroy silicon-based carrier mobility becomes geometrically irrelevant. The electron does not scatter because its trajectory is protected by the geometry of the lattice itself — not by doping profiles or shielding mass. This is the UNIGE/Salerno discovery that enables the DRAD-2 and beyond architecture. Quantum geometry becomes a deliberate engineering parameter.

PHASE 0 · MONTH 14–18
Foundation
Baseline DRAD-1 and graphene FET process stable. DRAD-750 production. Begin quantum metric characterisation in diamond heterostructures. EBL systems commissioned.
PHASE 1 · MONTH 18–24
Integration
SrTiO₃/LaAlO₃ grown on CVD diamond. Defect density <10¹⁰ cm⁻². gab tensor mapped via magnetotransport. DRAD-2 architecture frozen. First QG-FET: 1.2 THz at room temperature.
PHASE 2 · MONTH 24–36
Optimisation
GeoSim bandstructure design tools deployed. DRAD-HF, DRAD-Power, DRAD-Extreme variant design frozen. Axial electrode feedback sensors integrated. Multi-beam EBL at production scale.
PHASE 3 · YEAR 3–5
Advanced Architectures
Topological superconducting gates. 3D stacked heterostructures. DRAD-Adaptive self-optimising architecture. Full FPP-2 and FPP-3 integration. Commercial IP licensing to trusted partners.
Manufacturing

Made From
Asteroids

The entire DRAD production chain — substrate, transistor layer, interconnects, packaging — uses carbon allotropes produced from asteroid feedstock at L4. Zero silicon. Zero rare earth metals in the chip itself. Zero Earth launch cost for production after the seed ship.

☄️
ASTEROID XL5
Carbon feedstock · 40–45M tonnes
→
💎
LINE 3C CVD
Diamond substrate growth · methane precursor
→
⬡
LINE 3A GRAPHENE
FET layer deposition
→
⚡
EBL LITHOGRAPHY
DRAD-1 controlled · mask per variant
→
📦
PACKAGE + TEST
CNT composite package · radiation test
→
🚀
FOB EARTH ORBIT
Month 21 first delivery
Factory 3 — Lines 3A, 3C, 3G
Line 3C: CVD diamond optical elements and chip substrates. Line 3A: graphene deposition shared with Tesla valve production. Line 3G: DRAD-750 dedicated lithography and metallization. All lines operational Month 13–14 arrival.
Factory 4 — DRAD-2 and Beyond
Dedicated oxide MBE/ALD growth chamber. Advanced magnetotransport characterisation lab. Multi-beam EBL at production scale from Month 34. GeoSim compute cluster. Quantum metric design cycle entirely on-orbit.
GeoSim Design Tool
DRAD-1 accelerated simulation suite. Automated quantum metric tensor optimisation across variable lattice strains. Maximises superfluid weight and carrier velocity for target frequency and TID specification. Month 25 deployment.
Zero-G Crystal and Shell Synthesis
CVD diamond laser medium and carbyne pellet shells require zero-G for correct synthesis. Gravity-driven convection in terrestrial crystal growth creates Nd³⁺ doping striations — physically unavoidable on Earth. L4 zero-G pure diffusion achieves theoretical maximum uniformity. The production facility and the test environment are the same location by physics.
Market Applications

Who Needs
DRAD

⚛️
Nuclear Power
Every nuclear power plant on Earth has instrumentation and control systems that degrade from neutron and gamma flux. DRAD-750 and DRAD-1 operate indefinitely in primary containment environments. Direct replacement for all silicon-based reactor I&C systems.
🛰️
Commercial Satellites
Geosynchronous orbit radiation dose accumulates over satellite lifetime. High-radiation orbits (MEO, polar, Van Allen belt passing) currently limit mission duration. DRAD-1 and DRAD-750 remove the radiation lifetime constraint entirely. Satellite missions that were 15 years are now indefinite.
🚀
JAXA / Deep Space
H-3 launch vehicle avionics. Hayabusa successor probe electronics. JAXA lunar and planetary missions. 50% perpetual discount on DRAD-1 chips for Japan as Speculāris strategic investment partner. Every JAXA mission from Month 21 eligible.
⚡
Fusion Research
ITER, NIFS, QST, KSTAR, and private fusion companies. Plasma diagnostics, magnetic coil control, heating system control. DRAD-Power variant designed specifically for >15 Tesla environments. Every fusion device on Earth benefits from DRAD control electronics.
🏥
Medical Accelerators
Proton therapy and linear accelerators require radiation-hard control electronics. DRAD-750 provides reliable control electronics in high-radiation beam environments. No periodic replacement from radiation damage. Lower lifetime cost of ownership.
🛡️
Defense Electronics
EMP hardening, nuclear environment survivability, high-altitude EMP burst immunity. DRAD-1 CVD diamond substrate is inherently EMP-resistant — the same wide bandgap that blocks ionizing radiation blocks EMP-induced voltage spikes. Communications and command electronics that survive nuclear environments.
🌋
Chernobyl / Fukushima
The only chips that complete a sustained operation in Reactor 4 sub-basement. DRAD-Extreme rated >100 Mrad TID — operational indefinitely at 300 R/hr ambient. Every previous robotic remediation system failed from radiation. DRAD-equipped drones do not.
🏭
Industrial Automation
Petrochemical plants, particle accelerators, materials irradiation facilities, X-ray inspection systems. High-radiation industrial environments that currently require expensive shielded enclosures for conventional electronics. DRAD-750 eliminates the shielding requirement — the chip runs without it.

Silicon Has
a Radiation Problem.
Diamond Does Not.

For seventy years every electronic system deployed in a radiation environment has been constrained by the same fundamental limitation: silicon CMOS fails under dose. The solutions — shielding, redundancy, periodic replacement — add mass, add cost, and add failure modes. They do not solve the problem. They manage it.

DRAD solves it. CVD diamond substrate, graphene FET layer, RISC-V ISA, manufactured from asteroid carbon at L4 at zero raw material cost. Delivered FOB Earth orbit from Month 21. The chip that runs the solar system is also the chip that replaces every silicon device in every radiation environment on Earth.

Speculāris — On the cutting edge.

Delivered FOB
Earth Orbit.
Month 21.

DRAD-750 and DRAD-1 available from Month 21 of L4 factory arrival. All orders subject to Speculāris delivery schedule. Strategic investment partners receive 50% perpetual discount across the full DRAD family.

Full Programme Contact